[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"$fLpiep-L6JHN8uCDwmekjzJBqCHjwOo5HnfIcYyGfRyo":3},{"answer":4,"createTime":5,"id":6,"options":7,"origin":12,"question":19,"related":20,"source":30,"type":31},[],"2023-12-19 09:29:26",116421198,[8,9,10,11],"扩散炉","离子注入机","加热平板","对流烘箱",{"count":13,"courseId":14,"courseImg":15,"courseName":16,"workId":17,"workName":18},10,"3211dba4204083fd3b64dafac937e07c","https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F5d9e3d75707a6c50097a8d8ac7db91a2.jpeg","集成电路制造工艺","8e87e31c409f41a896be1fbb3eb22dd3","掺杂工艺测评","利用高温驱动杂质渗透进半导体内,此工序采用的设备是( )",[21,32,41,50,53,63,72,81,90,99],{"answer":22,"createTime":5,"id":23,"options":24,"question":29,"source":30,"type":31},[],116421190,[25,26,27,28],"离子束中混入电子","注入机未清洗干净","注入过程中晶圆的倾斜角度不合适","离子束电流检测不够精确","掺杂结束后要对硅片进行质星检测,造成硅片表面有颗粒污染的原因可能是( )","v1",0,{"answer":33,"createTime":5,"id":34,"options":35,"question":40,"source":30,"type":31},[],116421193,[36,37,38,39],"光刻","掺杂","刻蚀","金属化","( )是指按照一定的方式将杂质掺入到半导体等材科中,改变材料电学性质,达到形成半导体器件的目的",{"answer":42,"createTime":5,"id":43,"options":44,"question":49,"source":30,"type":31},[],116421196,[45,46,47,48],"离子源","磁分析器","加速管","靶室","( )的目的是把注入的杂质原子电离成离子,形成注入离子束,并输出具有一定动能的正离子束",{"answer":51,"createTime":5,"id":6,"options":52,"question":19,"source":30,"type":31},[],[8,9,10,11],{"answer":54,"createTime":5,"id":55,"options":56,"question":61,"source":30,"type":62},[],116421202,[57,58,59,60],"在局部阻挡掺杂","对器件结构造成连接或短路","对微小器件结构造成沟型损伤","整片硅片报废","在离子注入完成后,检验到硅片表面有颗粒污染严重的情况,该情况引起的主要问题( )",1,{"answer":64,"createTime":5,"id":65,"options":66,"question":71,"source":30,"type":62},[],116421208,[67,68,69,70],"硼酸三甲酯","氮化硼","硼","磷微晶玻璃片","回态源扩散的杂质源有( )",{"answer":73,"createTime":5,"id":74,"options":75,"question":80,"source":30,"type":62},[],116421212,[76,77,78,79],"激活杂质","修复晶格损伤","抑制沟道效应","抑制离子碰撞","退火的目的是( )",{"answer":82,"createTime":5,"id":83,"options":84,"question":89,"source":30,"type":62},[],116421217,[85,86,87,88],"注入杂质分布各向同性","不能独立控制结深和浓度","可造成表面损伤","设备价格较昂贵","离子注入的缺点有( )",{"answer":91,"createTime":5,"id":92,"options":93,"question":98,"source":30,"type":62},[],116421221,[94,95,96,97],"剂量与束流密度","射程与注入能量","注入角度","晶圆","以下是离子注入过程中的主要参数的是( )",{"answer":100,"createTime":5,"id":101,"options":102,"question":107,"source":30,"type":62},[],116421229,[103,104,105,106],"静电扫描","机械扫描","混合扫描","平行扫描","离子注入机扫描系统中,采用的扫描方式有( )"]