[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"$fqyUQPp05XsYDwmOtopEQSbs2M_Yvkcgw-NLEVy99In8":3},{"id":4,"source":5,"question":6,"options":7,"answer":12,"related":13,"type":24,"origin":99,"createTime":50},132332650,"v1","以下不属于直接带隙半导体的是( )",[8,9,10,11],"Si","CuInSe2","CdTe","GaAs",[],[14,27,38,46,51,61,69,79,87,93],{"id":15,"source":5,"question":16,"options":17,"answer":22,"related":23,"type":24,"origin":25,"createTime":26},132332622,"N型半导体的多子是",[18,19,20,21],"空穴","正离子","负离子","电子",[],[],0,null,"2024-02-25T21:35:55+08:00",{"id":28,"source":5,"question":29,"options":30,"answer":35,"related":36,"type":24,"origin":25,"createTime":37},132332623,"为了控制半导体的性质,通常会有意掺入杂质元素,对于晶体硅而言,以下属于施主杂质的是()",[31,32,33,34],"B","Ga","P","N",[],[],"2024-02-25T16:33:40+08:00",{"id":39,"source":5,"question":40,"options":41,"answer":43,"related":44,"type":24,"origin":25,"createTime":45},132332625,"以下属于间接带隙半导体的是 ( )",[11,10,42,8],"CIS",[],[],"2024-02-25T12:12:27+08:00",{"id":4,"source":5,"question":6,"options":47,"answer":48,"related":49,"type":24,"origin":25,"createTime":50},[8,9,10,11],[],[],"2024-02-25T20:31:36+08:00",{"id":52,"source":5,"question":53,"options":54,"answer":59,"related":60,"type":24,"origin":25,"createTime":26},132332654,"Si半导体禁带宽度为1.12eV,求入射光波长为下列哪个值时,能使Si价带上的电子发生本征跃迁?(h=4.13×10-15eV·s) ( )",[55,56,57,58],"1200nm","1500nm","1000nm","2000nm",[],[],{"id":62,"source":5,"question":63,"options":64,"answer":67,"related":68,"type":24,"origin":25,"createTime":26},132332655,"在Si中掺入以下哪种元素可以得到P型半导体",[65,66,33,31],"C","O",[],[],{"id":70,"source":5,"question":71,"options":72,"answer":77,"related":78,"type":24,"origin":25,"createTime":37},132333347,"下列关于本征半导体的说法错误的是: ( )",[73,74,75,76],"本征半导体中有两种载流子:自由电子和空穴","本征半导体的导电性取决于掺杂浓度","本征半导体中,电子和空穴总是成对地产生","本征半导体的导电性取决于外加能量",[],[],{"id":80,"source":5,"question":81,"options":82,"answer":83,"related":84,"type":85,"origin":25,"createTime":86},132334326,"薄膜电池指半导体层厚度低于60μm的光伏电池.( )",[],[],[],3,"2024-02-23T16:24:53+08:00",{"id":88,"source":5,"question":89,"options":90,"answer":91,"related":92,"type":85,"origin":25,"createTime":86},132334327,"PN结中内建电场对载流子的漂移起到阻碍作用",[],[],[],{"id":94,"source":5,"question":95,"options":96,"answer":97,"related":98,"type":85,"origin":25,"createTime":86},132334329,"形成PN结时,扩散和漂移这一对相反的运动最终达到动态平衡,空间电荷区的厚度固定不变",[],[],[],{"courseName":100,"courseImg":101,"workName":102,"workId":103,"count":104,"courseId":105},"光伏理化基础","https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F2474ed02e43881d6279da3e20c64ec45.jpg","选修班作业(三)","work_32187344",29,"8675297c4559ba49576c96d483c0cc55"]