[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"$f29LjWLJbdX4P08azHPtUJ-Tun3001ejU9jqrTIjl4Is":3},{"id":4,"source":5,"question":6,"options":7,"answer":8,"related":9,"type":85,"origin":99,"createTime":86},132334326,"v1","薄膜电池指半导体层厚度低于60μm的光伏电池.( )",[],[],[10,23,34,45,53,63,71,81,87,93],{"id":11,"source":5,"question":12,"options":13,"answer":18,"related":19,"type":20,"origin":21,"createTime":22},132332622,"N型半导体的多子是",[14,15,16,17],"空穴","正离子","负离子","电子",[],[],0,null,"2024-02-25T21:35:55+08:00",{"id":24,"source":5,"question":25,"options":26,"answer":31,"related":32,"type":20,"origin":21,"createTime":33},132332623,"为了控制半导体的性质,通常会有意掺入杂质元素,对于晶体硅而言,以下属于施主杂质的是()",[27,28,29,30],"B","Ga","P","N",[],[],"2024-02-25T16:33:40+08:00",{"id":35,"source":5,"question":36,"options":37,"answer":42,"related":43,"type":20,"origin":21,"createTime":44},132332625,"以下属于间接带隙半导体的是 ( )",[38,39,40,41],"GaAs","CdTe","CIS","Si",[],[],"2024-02-25T12:12:27+08:00",{"id":46,"source":5,"question":47,"options":48,"answer":50,"related":51,"type":20,"origin":21,"createTime":52},132332650,"以下不属于直接带隙半导体的是( )",[41,49,39,38],"CuInSe2",[],[],"2024-02-25T20:31:36+08:00",{"id":54,"source":5,"question":55,"options":56,"answer":61,"related":62,"type":20,"origin":21,"createTime":22},132332654,"Si半导体禁带宽度为1.12eV,求入射光波长为下列哪个值时,能使Si价带上的电子发生本征跃迁?(h=4.13×10-15eV·s) ( )",[57,58,59,60],"1200nm","1500nm","1000nm","2000nm",[],[],{"id":64,"source":5,"question":65,"options":66,"answer":69,"related":70,"type":20,"origin":21,"createTime":22},132332655,"在Si中掺入以下哪种元素可以得到P型半导体",[67,68,29,27],"C","O",[],[],{"id":72,"source":5,"question":73,"options":74,"answer":79,"related":80,"type":20,"origin":21,"createTime":33},132333347,"下列关于本征半导体的说法错误的是: ( )",[75,76,77,78],"本征半导体中有两种载流子:自由电子和空穴","本征半导体的导电性取决于掺杂浓度","本征半导体中,电子和空穴总是成对地产生","本征半导体的导电性取决于外加能量",[],[],{"id":4,"source":5,"question":6,"options":82,"answer":83,"related":84,"type":85,"origin":21,"createTime":86},[],[],[],3,"2024-02-23T16:24:53+08:00",{"id":88,"source":5,"question":89,"options":90,"answer":91,"related":92,"type":85,"origin":21,"createTime":86},132334327,"PN结中内建电场对载流子的漂移起到阻碍作用",[],[],[],{"id":94,"source":5,"question":95,"options":96,"answer":97,"related":98,"type":85,"origin":21,"createTime":86},132334329,"形成PN结时,扩散和漂移这一对相反的运动最终达到动态平衡,空间电荷区的厚度固定不变",[],[],[],{"courseName":100,"courseImg":101,"workName":102,"workId":103,"count":104,"courseId":105},"光伏理化基础","https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F2474ed02e43881d6279da3e20c64ec45.jpg","选修班作业(三)","work_32187344",29,"8675297c4559ba49576c96d483c0cc55"]