[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"$fXrs4XCS1FM2rp8ooRhCh9oRbWok9gnD0d_VeztDCEyY":3},{"answer":4,"createTime":5,"id":6,"options":7,"origin":12,"question":19,"related":20,"source":29,"type":30},[],"2024-12-09 17:37:51",169895478,[8,9,10,11],"减小器件表观宽","增加器件表观宽度","减小器件有效宽度","增加器件有效宽度",{"count":13,"courseId":14,"courseImg":15,"courseName":16,"workId":17,"workName":18},16,"19e537518fa9d1c1a2f7a456db100075","https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F25b30343053994e8940089572d36015b.jpg","集成电路制造技术原理与工艺","work_39619599","半导体工艺整合","局部氧化(local oxidation of silicon,LOCOS)隔离同时解决了,器件隔离和寄生器件形成两个问题.工艺简单易行,且隔离密度显著高于 p-n 结隔离.缺点是表面有高台阶,使后续工艺的台阶覆盖差,影响光刻质量,形成鸟嘴(bird's beak),以及()",[21,31,39,47,55,64,67,78,87,96],{"answer":22,"createTime":5,"id":23,"options":24,"question":28,"source":29,"type":30},[],169895473,[25,26,27],"WAT测试","FT测试","HTOL测试","晶圆FAB OUT前,需要做什么测试","v1",0,{"answer":32,"createTime":5,"id":33,"options":34,"question":38,"source":29,"type":30},[],169895474,[35,36,37],"N-sub 晶圆","本征半导体晶圆","P-sub 晶圆","CMOS工艺的晶圆衬底材料是什么类型",{"answer":40,"createTime":5,"id":41,"options":42,"question":46,"source":29,"type":30},[],169895475,[43,44,45],"降低铝的电阻率","抗电迁移","与Ti层形成良好键合","用铝合金做金属互连的目的是什么",{"answer":48,"createTime":5,"id":49,"options":50,"question":54,"source":29,"type":30},[],169895476,[51,52,53],"光刻胶会污染铜,形成缺陷","没有一种有效的刻蚀铜的方法","大马士革结构可以防止铜扩散","为什么要用大马士革结构实现铜互连",{"answer":56,"createTime":5,"id":57,"options":58,"question":63,"source":29,"type":30},[],169895477,[59,60,61,62],"深沟槽隔离技术","浅深沟槽隔离技术","局部氧化技术","漏端轻掺杂(LDD)技术","沟道长度减小到一定程度后,出现的一系列二级物理效应统称为短沟道效应.这些二级物理效应包括:(a)短沟道器件阈值电压对沟道长度的变化非常敏感和(b)热载流子效应.为了降低峰值电场,抑制短沟MOSFET热载流子效应,一般采用()",{"answer":65,"createTime":5,"id":6,"options":66,"question":19,"source":29,"type":30},[],[8,9,10,11],{"answer":68,"createTime":69,"id":70,"options":71,"question":76,"source":29,"type":77},[],"2024-12-10 00:27:40",170036147,[72,73,74,75],"结深推进","激活杂质","修复损伤","形成氧化层","轻掺杂漏(LDD)离子注入后,为什么要进行退火()",1,{"answer":79,"createTime":69,"id":80,"options":81,"question":86,"source":29,"type":77},[],170036151,[82,83,84,85],"鸟嘴效应","价格贵","集成度低","与先进工艺不兼容","是什么因素影响LOCOS工艺在先进工艺的应用()",{"answer":88,"createTime":69,"id":89,"options":90,"question":95,"source":29,"type":77},[],170036153,[91,92,93,94],"铜很容易在硅和硅化物中扩散,铜扩散到衬底会导致重金属污染,影响器件的性能","铜很难粘附在硅化物上","铜是软金属,不能作为绑定的金属","铜在空气中抗腐蚀能力很差,它不能形成致密的氧化物","为什么铜制程工艺的最后一层金属是铝材料()",{"answer":97,"createTime":69,"id":98,"options":99,"question":104,"source":29,"type":77},[],170036156,[100,101,102,103],"源漏离子注入","提高PW掺杂浓度","提高沟道掺杂浓度","晕环(Halo)\u002F口袋(Pocket)离子注入","改善漏致势垒降低效应的方法有()"]