[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"$fWeciJI1JQpRqp5Ue7mtjRh_43e3aCnJOUcCc-AbKMYI":3},{"answer":4,"createTime":5,"id":6,"options":7,"origin":12,"question":19,"related":20,"source":30,"type":31},[],"2025-06-03 22:01:55",193620186,[8,9,10,11],"多子漂移电流","复合-产生电流","少子扩散电流","多子扩散电流",{"count":13,"courseId":14,"courseImg":15,"courseName":16,"workId":17,"workName":18},25,"20b04bbdb6744040a0ff8784fd8c3d51","https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fc41b8c609b09f3b6ce0b6103f4b3966b.jpg","微电子器件","work_41539249","2.4楼梯","理想PN结的电流是( )",[21,32,35,44,53,59,64,69,75,80],{"answer":22,"createTime":5,"id":23,"options":24,"question":29,"source":30,"type":31},[],193620185,[25,26,27,28],"漂移和扩散","扩散和复合","产生和扩散","产生和漂移","反向偏置的PN结,靠近耗尽层边界的中性区内会发生( )过程","v1",0,{"answer":33,"createTime":5,"id":6,"options":34,"question":19,"source":30,"type":31},[],[8,9,10,11],{"answer":36,"createTime":5,"id":37,"options":38,"question":43,"source":30,"type":31},[],193620187,[39,40,41,42],"\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fa1f955f1c71158fe47ac5534824306fa.png\">","\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fec8f7fe437bd57b9747b82f37bac61f0.png\">","\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Ff0ec0856fef89c26b91bb7693599f408.png\">","\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Ff6dba71bc8a2339eb8d217b6cabc4d45.png\">","当以正向扩散电流为主时,PN结的IV特性在\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F3814abc2faf132613a190ea2c2d1b54f.png\">系统中的斜率为( )",{"answer":45,"createTime":5,"id":46,"options":47,"question":52,"source":30,"type":31},[],193620188,[48,49,50,51],"势垒区的产生电流","势垒区的复合电流","产生电流","复合电流","反向偏置情况下,除空穴扩散电流\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fe7f7780b13c5abf11da76bf7d40f6371.png\">和电子扩散电流\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fefccbea2d2e1e81e346ead91df80ca26.png\">外,还有( )",{"answer":54,"createTime":5,"id":55,"options":56,"question":57,"source":30,"type":58},[],193620189,[],"当对PN结外加正向电压时,其势垒区宽度会( ),势垒区的势垒高度会( )(选择填空:增大,减小)",2,{"answer":60,"createTime":5,"id":61,"options":62,"question":63,"source":30,"type":58},[],193620191,[],"当对PN结外加反向电压时,其势垒区宽度会( ),势垒区的势垒高度会( )(选择填空:增大,减小)",{"answer":65,"createTime":5,"id":66,"options":67,"question":68,"source":30,"type":58},[],193620194,[],"当对PN结外加正向电压时,中性区与耗尽区边界上的少子浓度比该处的平衡少子浓度( );当对PN结外加反向电压时,中性区与耗尽区边界上的少子浓度比该处的平衡少子浓度( )(选择填空:多,少)",{"answer":70,"createTime":71,"id":72,"options":73,"question":74,"source":30,"type":58},[],"2025-06-03 22:01:56",193620199,[],"在P型中性区与耗尽区的边界上,少子浓度np与外加电压V之间的关系可表示为\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F4d4b55c6084317e983175dba12265464.webp\">.若P型区的掺杂浓度\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F311b4be1610885cb0ff3c4e8ccc9e67d.webp\">,外加电压V = 0.52V,则P型区与耗尽区边界上的少子浓度np为( )\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fba2222fa8a8681b82c568044ee9f3449.webp\">\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F928e39158f7df33f9027269215b3191b.webp\">(小数点后1位)",{"answer":76,"createTime":71,"id":77,"options":78,"question":79,"source":30,"type":58},[],193620205,[],"PN结的正向电流由( )电流、( )电流和( )电流三部分所组成.(选择填空,电子扩散,空穴扩散,势垒区复合,势垒区产生)",{"answer":81,"createTime":71,"id":82,"options":83,"question":84,"source":30,"type":58},[],193620206,[],"PN结的正向电流很大,是因为正向电流的电荷来源是( );PN结的反向电流很小,是因为反向电流的电荷来源是( ).(选择填空:多子,少子)"]