[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"$fs9e2m4RA5ilpyjYoqhkG_GGjBUl3tssenxPO0CSO3nI":3},{"answer":4,"createTime":5,"id":6,"options":7,"origin":8,"question":15,"related":16,"source":27,"type":61},[],"2025-06-03 22:01:56",193620199,[],{"count":9,"courseId":10,"courseImg":11,"courseName":12,"workId":13,"workName":14},25,"20b04bbdb6744040a0ff8784fd8c3d51","https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fc41b8c609b09f3b6ce0b6103f4b3966b.jpg","微电子器件","work_41539249","2.4楼梯","在P型中性区与耗尽区的边界上,少子浓度np与外加电压V之间的关系可表示为\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F4d4b55c6084317e983175dba12265464.webp\">.若P型区的掺杂浓度\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F311b4be1610885cb0ff3c4e8ccc9e67d.webp\">,外加电压V = 0.52V,则P型区与耗尽区边界上的少子浓度np为( )\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fba2222fa8a8681b82c568044ee9f3449.webp\">\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F928e39158f7df33f9027269215b3191b.webp\">(小数点后1位)",[17,29,38,47,56,62,67,72,75,80],{"answer":18,"createTime":19,"id":20,"options":21,"question":26,"source":27,"type":28},[],"2025-06-03 22:01:55",193620185,[22,23,24,25],"漂移和扩散","扩散和复合","产生和扩散","产生和漂移","反向偏置的PN结,靠近耗尽层边界的中性区内会发生( )过程","v1",0,{"answer":30,"createTime":19,"id":31,"options":32,"question":37,"source":27,"type":28},[],193620186,[33,34,35,36],"多子漂移电流","复合-产生电流","少子扩散电流","多子扩散电流","理想PN结的电流是( )",{"answer":39,"createTime":19,"id":40,"options":41,"question":46,"source":27,"type":28},[],193620187,[42,43,44,45],"\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fa1f955f1c71158fe47ac5534824306fa.png\">","\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fec8f7fe437bd57b9747b82f37bac61f0.png\">","\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Ff0ec0856fef89c26b91bb7693599f408.png\">","\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Ff6dba71bc8a2339eb8d217b6cabc4d45.png\">","当以正向扩散电流为主时,PN结的IV特性在\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F3814abc2faf132613a190ea2c2d1b54f.png\">系统中的斜率为( )",{"answer":48,"createTime":19,"id":49,"options":50,"question":55,"source":27,"type":28},[],193620188,[51,52,53,54],"势垒区的产生电流","势垒区的复合电流","产生电流","复合电流","反向偏置情况下,除空穴扩散电流\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fe7f7780b13c5abf11da76bf7d40f6371.png\">和电子扩散电流\u003Cimg src=\"https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002Fefccbea2d2e1e81e346ead91df80ca26.png\">外,还有( )",{"answer":57,"createTime":19,"id":58,"options":59,"question":60,"source":27,"type":61},[],193620189,[],"当对PN结外加正向电压时,其势垒区宽度会( ),势垒区的势垒高度会( )(选择填空:增大,减小)",2,{"answer":63,"createTime":19,"id":64,"options":65,"question":66,"source":27,"type":61},[],193620191,[],"当对PN结外加反向电压时,其势垒区宽度会( ),势垒区的势垒高度会( )(选择填空:增大,减小)",{"answer":68,"createTime":19,"id":69,"options":70,"question":71,"source":27,"type":61},[],193620194,[],"当对PN结外加正向电压时,中性区与耗尽区边界上的少子浓度比该处的平衡少子浓度( );当对PN结外加反向电压时,中性区与耗尽区边界上的少子浓度比该处的平衡少子浓度( )(选择填空:多,少)",{"answer":73,"createTime":5,"id":6,"options":74,"question":15,"source":27,"type":61},[],[],{"answer":76,"createTime":5,"id":77,"options":78,"question":79,"source":27,"type":61},[],193620205,[],"PN结的正向电流由( )电流、( )电流和( )电流三部分所组成.(选择填空,电子扩散,空穴扩散,势垒区复合,势垒区产生)",{"answer":81,"createTime":5,"id":82,"options":83,"question":84,"source":27,"type":61},[],193620206,[],"PN结的正向电流很大,是因为正向电流的电荷来源是( );PN结的反向电流很小,是因为反向电流的电荷来源是( ).(选择填空:多子,少子)"]