[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"$fwbWEVEl7HDeI05doAraP-Boq3C5h5IeMwm6nV8cBX4s":3},{"answer":4,"createTime":5,"id":6,"options":7,"origin":11,"question":18,"related":19,"source":29,"type":30},[],"2025-11-16 21:08:33",235133902,[8,9,10],"Sb+","B++","As+",{"count":12,"courseId":13,"courseImg":14,"courseName":15,"workId":16,"workName":17},28,"1a8799ecc30815d06d23269a6d8cbba0","https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F9c1e48361b00f3ee2086f4e259ed792b.jpg","半导体制造工艺与技术（含专业英语）","work_48196065","离子注入","P WeLL 离子注入会使用到以下哪种Species",[20,31,40,49,58,66,71,81,84,93],{"answer":21,"createTime":5,"id":22,"options":23,"question":28,"source":29,"type":30},[],235133895,[24,25,26,27],"离子注入会导致晶圆带电,需要用电子予以中和","晶圆表面颗粒污染会阻挡离子束,对良品率造成影响","离子注入工艺可以轻松将各种掺杂离子区分开来,可以杜绝其它杂质元素污染","离子注入工艺中使用的气体几乎全部是剧毒或易燃易爆气体,操作时需要严格遵守安全章程","关于离子注入过程中需要注意的事项,下列哪个说法是错误的","v1",0,{"answer":32,"createTime":5,"id":33,"options":34,"question":39,"source":29,"type":30},[],235133896,[35,36,37,38],"离子注入的横向扩散很大,不利于提高IC集成度","离子注入的工艺温度更高","离子注入能更精确地控制掺杂的浓度分布和掺杂深度","离子注入受到杂质在衬底材料中固溶度的影响,掺杂元素的挑选范围窄","离子注入掺杂与扩散掺杂相比,下列说法正确的是",{"answer":41,"createTime":5,"id":42,"options":43,"question":48,"source":29,"type":30},[],235133897,[44,45,46,47],"电活性","晶格损伤","横向效应","沟道效应","离子注入过程是一个非平衡过程,高能离子进入靶后,不断与原子核及其核外电子碰撞,逐步损失能量,最后停下来.停下来的位置是随机的,大部分不在晶格上,因而没有什么",{"answer":50,"createTime":5,"id":51,"options":52,"question":57,"source":29,"type":30},[],235133898,[53,54,55,56],"氟化硼离化产生的单个硼离子是晶圆所需要的","质谱分析仪会产生磁场,不同种类的离子以15 ~ 40keV的能量离开离化子系统","每一种带负电的离子都会被以特定的半径沿弧形扭转,并和硼离子一起通过狭缝","在有些系统中,被加速后对产生质量干扰的离子还会进行分析","关于离子注入系统中离子选择描述错误的是",{"answer":59,"createTime":5,"id":60,"options":61,"question":65,"source":29,"type":30},[],235133899,[62,63,64],"高能及低剂量","低能及高剂量","低能及低剂量","IMP工艺中Well IMP注入的要求是",{"answer":67,"createTime":5,"id":68,"options":69,"question":70,"source":29,"type":30},[],235133900,[62,63,64],"IMP工艺中VT IMP注入的要求是",{"answer":72,"createTime":5,"id":73,"options":74,"question":80,"source":29,"type":30},[],235133901,[75,76,77,78,79],"XRD","热波法","四探针法","TXRF","SIMS","离子注入工艺的3个主要工艺评估方法包括",{"answer":82,"createTime":5,"id":6,"options":83,"question":18,"source":29,"type":30},[],[8,9,10],{"answer":85,"createTime":5,"id":86,"options":87,"question":92,"source":29,"type":30},[],235133903,[88,89,90,91],"常规退火","尖峰退火","激光退火","以上都不是","在离子注入工艺中,哪种退火方式可以更有效地减少杂质扩散",{"answer":94,"createTime":5,"id":95,"options":96,"question":97,"source":29,"type":30},[],235133904,[89,90,88,91],"在离子注入工艺中,哪种退火方式更适合局部处理"]