[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"$fICmr1TdSl8058CKAkQYqNY2FypnegWOb2ySoGaQ8iA4":3},{"answer":4,"createTime":5,"id":6,"options":7,"origin":12,"question":19,"related":20,"source":24,"type":25},[],"2026-01-10 15:16:07",308733009,[8,9,10,11],"几百欧,几十千欧到几百千欧","几十千欧到几百千欧,几百欧","几百欧,几百欧","几十千欧到几百千欧,几十千欧到几百千欧",{"count":13,"courseId":14,"courseImg":15,"courseName":16,"workId":17,"workName":18},11,"53e1d2ef4961cca8eea3e23969ad2cb9","https:\u002F\u002Ftihai-oss-cloud.itihey.com\u002Fimg\u002F03a579384a6dc297c89809b582fcc767.png","默认课程","d4f5138ce5d54e2ea4311d0e74fa1a17","任务2.1 二极管整流电路分析-1","一般二极管的正向电阻测量值为( ),反向电阻为( ).-1",[21,26,35,40,45,50,55,60,65,70],{"answer":22,"createTime":5,"id":6,"options":23,"question":19,"source":24,"type":25},[],[8,9,10,11],"v1",0,{"answer":27,"createTime":28,"id":29,"options":30,"question":33,"source":24,"type":34},[],"2026-01-10 15:21:30",308737906,[31,32],"正确","错误","半导体二极管按其结构的不同,可分为点接触型、面接触型和反向型3种",3,{"answer":36,"createTime":28,"id":37,"options":38,"question":39,"source":24,"type":34},[],308737907,[31,32],"点触型二极管其接触面积小,结电容小,所以流过的电流小,但允许的最高频率低.一般在低频检波和小功率整流中使用",{"answer":41,"createTime":28,"id":42,"options":43,"question":44,"source":24,"type":34},[],308737908,[31,32],"面接触型: 接触面积大,结电容大,所以流过的电流大,但允许的最高频率低.一般用于整流管中",{"answer":46,"createTime":28,"id":47,"options":48,"question":49,"source":24,"type":34},[],308737909,[31,32],"二极管正、反向电阻的测量值相差越大越好,一般二极管的正向电阻测量值为几百欧,反向电阻为几十千欧到几百千欧",{"answer":51,"createTime":28,"id":52,"options":53,"question":54,"source":24,"type":34},[],308737910,[31,32],"二极管是电子电路中最常用的半导体器件之一.利用其单向导电性及导通时正向压降很小的特点,可应用于整流、检波、钳位、限幅、开关以及元件保护等各种电路",{"answer":56,"createTime":28,"id":57,"options":58,"question":59,"source":24,"type":34},[],308737911,[31,32],"二极管的基本结构就是一个PN结,因此二极管具有和PN结安全相同的特性",{"answer":61,"createTime":28,"id":62,"options":63,"question":64,"source":24,"type":34},[],308737912,[31,32],"当二极管的正向电压UF开始增加时(即正向特性的起始部分),此时UF较小,正向电流仍几乎为零,该区域称之为死区,硅管的死区电压约为0.5V,锗管约为0.1V.只有当UF大于死区电压后,才开始产生正向电流IF.二极管正偏导通后的管压降是一个恒定值,硅管和锗管分别取0.3V和0.7V的典型值",{"answer":66,"createTime":28,"id":67,"options":68,"question":69,"source":24,"type":34},[],308737913,[31,32],"当二极管外加反向偏压UR时,反向电流IR较小,基本可忽略不计.室温下一般硅管的反向饱和电流小于1μA ,锗管为几十到几百微安",{"answer":71,"createTime":28,"id":72,"options":73,"question":74,"source":24,"type":34},[],308737914,[31,32],"二极管击穿特性属于反向特性的特殊部分.当UR继续增大并超过某一特定电压值时,反向电流将急剧增大,这种现象称为击穿"]